US 12,249,531 B2
Method for forming semiconductor structure
Chih-Hsin Yang, Zhubei (TW); Dian-Hau Chen, Hsinchu (TW); and Yen-Ming Chen, Hsin-Chu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 6, 2022, as Appl. No. 17/738,182.
Prior Publication US 2023/0360946 A1, Nov. 9, 2023
Int. Cl. H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 49/02 (2006.01)
CPC H01L 21/6835 (2013.01) [H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 24/13 (2013.01); H01L 28/87 (2013.01); H01L 2221/68304 (2013.01); H01L 2221/68363 (2013.01); H01L 2221/68368 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/03622 (2013.01); H01L 2224/03845 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05657 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/13006 (2013.01); H01L 2224/80006 (2013.01); H01L 2224/80379 (2013.01); H01L 2224/808 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/83005 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor structure, comprising:
forming a contact feature over an insulating layer;
forming a first passivation layer over the contact feature;
etching the first passivation layer to form a trench exposing the contact feature;
forming an oxide layer over the contact feature and the first passivation layer and in the trench;
forming a first non-conductive structure over the oxide layer;
patterning the first non-conductive structure to form a gap;
filling a conductive material in the gap to form a first conductive feature, wherein the first non-conductive structure and the first conductive feature form a first bonding structure; and
attaching a carrier substrate to the first bonding structure via a second bonding structure over the carrier substrate.