US 12,249,529 B2
Light-emitting diode substrate and manufacturing method thereof, display device
Haixu Li, Beijing (CN); Xiao Zhang, Beijing (CN); Fei Wang, Beijing (CN); Mingxing Wang, Beijing (CN); Shulei Li, Beijing (CN); Xue Dong, Beijing (CN); Guangcai Yuan, Beijing (CN); Zhanfeng Cao, Beijing (CN); Xin Gu, Beijing (CN); Ke Wang, Beijing (CN); Feng Qu, Beijing (CN); Xuan Liang, Beijing (CN); and Junwei Yan, Beijing (CN)
Assigned to BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Appl. No. 17/427,628
Filed by BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
PCT Filed Oct. 30, 2020, PCT No. PCT/CN2020/125490
§ 371(c)(1), (2) Date Jul. 30, 2021,
PCT Pub. No. WO2022/088093, PCT Pub. Date May 5, 2022.
Prior Publication US 2022/0352000 A1, Nov. 3, 2022
Int. Cl. H01L 21/683 (2006.01); H01L 25/075 (2006.01); H01L 33/62 (2010.01)
CPC H01L 21/6835 (2013.01) [H01L 25/0753 (2013.01); H01L 33/62 (2013.01); H01L 2221/68354 (2013.01); H01L 2221/68368 (2013.01); H01L 2221/68386 (2013.01); H01L 2933/0066 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A manufacturing method of a light-emitting diode substrate, comprising:
growing an epitaxial layer group of M light-emitting diode chips on a substrate;
transferring N epitaxial layer groups on N substrates onto a transition carrier substrate, the N epitaxial layer groups on the N substrates being densely arranged on the transition carrier substrate; and
transferring at least part of N*M light-emitting diode chips corresponding to the N epitaxial layer groups on the transition carrier substrate onto a driving substrate,
wherein an area of the transition carrier substrate is greater than or equal to a sum of areas of the N substrates, M is a positive integer greater than or equal to 2, and N is a positive integer greater than or equal to 2,
growing the epitaxial layer group of M light-emitting diode chips on the substrate comprises:
forming a first conductivity type semiconductor layer on the substrate; forming a light-emitting layer on a side of the first conductivity type semiconductor layer away from the substrate; and forming a second conductivity type semiconductor layer on a side of the light-emitting layer away from the first conductivity type semiconductor layer,
the light-emitting diode chips corresponding to the N epitaxial layer groups on the N substrates are configured to emit light of a same color.