CPC H01L 21/67144 (2013.01) [B65G 47/90 (2013.01); H01L 25/0753 (2013.01); H01L 33/62 (2013.01); H10N 30/074 (2023.02); H10N 30/206 (2023.02); H10N 30/706 (2024.05); H10N 39/00 (2023.02); H01L 2933/0066 (2013.01)] | 16 Claims |
1. A transfer structure, comprising: a first electrode, a piezoelectric layer, a second electrode and an adhesion layer which are sequentially stacked on a substrate; the first electrode and the second electrode being insulated from each other;
the transfer structure further comprises a position-limiting layer, and the position-limiting layer comprises a cavity;
wherein the piezoelectric layer and at least part of the adhesion layer are in the cavity of the position-limiting layer; and in a direction perpendicular to the substrate, a distance between a surface of the position-limiting layer away from the substrate and the substrate is greater than a distance between a surface of the adhesion layer away from the substrate and the substrate, and at least part of the at least part of the adhesion layer located in the cavity is further away from the first electrode than the piezoelectric layer.
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