US 12,249,520 B2
Wet etch apparatus
Hong-Ting Lu, Taichung (TW); and Han-Wen Liao, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Aug. 28, 2021, as Appl. No. 17/460,209.
Application 17/460,209 is a division of application No. 16/437,775, filed on Jun. 11, 2019, granted, now 11,107,707.
Claims priority of provisional application 62/771,461, filed on Nov. 26, 2018.
Prior Publication US 2021/0391189 A1, Dec. 16, 2021
Int. Cl. H01L 21/67 (2006.01); C25F 3/02 (2006.01); C25F 3/12 (2006.01); H01L 21/306 (2006.01); H01L 21/3063 (2006.01); H01L 21/3213 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/6708 (2013.01) [C25F 3/02 (2013.01); C25F 3/12 (2013.01); H01L 21/306 (2013.01); H01L 21/30604 (2013.01); H01L 21/30608 (2013.01); H01L 21/3063 (2013.01); H01L 21/32133 (2013.01); H01L 21/32134 (2013.01); H01L 21/6831 (2013.01); H01L 21/687 (2013.01); H01L 29/66545 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A wet etch apparatus, comprising:
a wafer chuck;
a dispensing nozzle above the wafer chuck;
a liquid etchant container in fluid communication with the dispensing nozzle; and
an electric field generator operative to generate an electric field across the wafer chuck, wherein the electric field generator comprises a first electrode and a second electrode spaced apart from the first electrode in a first direction substantially perpendicular to a top surface of the wafer chuck, and the second electrode is an electrode plate above the wafer chuck, wherein the electrode plate is external to the dispensing nozzle and spaced apart from an outer sidewall of the dispensing nozzle.