US 12,249,516 B2
Manufacturing method of memory device using mask patterns
Kyung Min Park, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Nov. 30, 2021, as Appl. No. 17/538,366.
Claims priority of application No. 10-2021-0087387 (KR), filed on Jul. 2, 2021.
Prior Publication US 2023/0005754 A1, Jan. 5, 2023
Int. Cl. H01L 21/311 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/31144 (2013.01) [H01L 21/31116 (2013.01); H01L 21/76805 (2013.01); H01L 21/7684 (2013.01); H01L 21/76895 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of manufacturing a memory device, the method comprising:
forming a mask layer on an etching target layer;
forming, on the mask layer, a compensation layer with a second impurity that chemically bonds to the mask layer with a first impurity;
performing a first etching process that patterns the compensation layer and the mask layer to form a mask pattern; and
performing a second etching process that etches the etching target layer, which is exposed through openings of the mask pattern,
wherein the second impurity includes hydrogen.