US 12,249,513 B2
Surface treatment method, method for producing semiconductor substrate including the surface treatment method, composition for surface treatment, and system for producing semiconductor substrate including the composition for surface treatment
Tsutomu Yoshino, Kiyosu (JP); and Yasuto Ishida, Kiyosu (JP)
Assigned to FUJIMI INCORPORATED, (JP)
Filed by Fujimi Incorporated, Kiyosu (JP)
Filed on Aug. 4, 2022, as Appl. No. 17/881,283.
Claims priority of application No. 2021-129176 (JP), filed on Aug. 5, 2021; and application No. 2022-078426 (JP), filed on May 11, 2022.
Prior Publication US 2023/0053210 A1, Feb. 16, 2023
Int. Cl. H01L 21/306 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/30625 (2013.01) [H01L 21/0217 (2013.01)] 8 Claims
 
1. A surface treatment method for reducing a residue comprising inorganic oxide abrasive grains on a surface of a polished object to be polished comprising silicon nitride using a composition for surface treatment, wherein
the composition for surface treatment comprises a zeta potential adjusting agent having a negatively charged functional group and having a viscosity of an aqueous solution having a concentration of 20% by mass at 25° C. of 10 mPa·s or more and a dispersing medium, and
the surface treatment method comprises controlling a zeta potential of the silicon nitride and a zeta potential of the inorganic oxide abrasive grains each to −30 mV or less using the composition for surface treatment.