US 12,249,512 B2
Semiconductor structure with air gap in pattern- dense region and method of manufacturing the same
Jar-Ming Ho, Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Jun. 21, 2024, as Appl. No. 18/749,899.
Application 18/383,158 is a division of application No. 18/220,963, filed on Jul. 12, 2023.
Application 17/516,698 is a division of application No. 16/857,879, filed on Apr. 24, 2020, granted, now 11,309,186.
Application 18/749,899 is a continuation of application No. 18/383,158, filed on Oct. 24, 2023, granted, now 12,131,908.
Application 18/220,963 is a continuation in part of application No. 17/516,698, filed on Nov. 2, 2021, granted, now 11,742,209.
Prior Publication US 2024/0339325 A1, Oct. 10, 2024
Int. Cl. H01L 21/00 (2006.01); H01L 21/285 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/544 (2006.01); H10B 12/00 (2023.01)
CPC H01L 21/28506 (2013.01) [H01L 21/3213 (2013.01); H01L 21/7682 (2013.01); H01L 23/5329 (2013.01); H01L 23/544 (2013.01); H10B 12/00 (2023.02); H10B 12/09 (2023.02); H10B 12/50 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor structure, comprising:
forming a first conductive layer over a substrate;
forming a first dielectric layer over the first conductive layer;
form a first opening and a second opening in the first dielectric layer, wherein the first opening is in a pattern-dense region and the second opening is in a pattern-loose region;
depositing a plurality of first conductive plugs in the first opening;
depositing a lining layer over the first conductive plugs and the first dielectric layer, wherein the lining layer lines a sidewall and a bottom of the second opening;
forming a second conductive plug in a remaining portion of the second opening;
forming a second conductive layer over the lining layer and the second conductive plug;
depositing an energy removable layer in the first opening between the first conductive plugs; and
depositing a second dielectric layer in the first opening over the energy removable layer.