US 12,249,509 B2
Selective deposition of carbon on photoresist layer for lithography applications
Larry Gao, Fremont, CA (US); and Nancy Fung, Livermore, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jul. 31, 2023, as Appl. No. 18/228,234.
Application 18/228,234 is a continuation of application No. 17/202,043, filed on Mar. 15, 2021, granted, now 11,776,811.
Claims priority of provisional application 63/023,290, filed on May 12, 2020.
Prior Publication US 2023/0377890 A1, Nov. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/033 (2006.01); G03F 7/004 (2006.01); G03F 7/20 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/0337 (2013.01) [H01L 21/31144 (2013.01); G03F 7/0042 (2013.01); G03F 7/2004 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for etching a hardmask layer, comprising:
forming a patterned photoresist layer having openings on a hardmask layer;
forming a passivation layer comprising a carbon-containing material only on a top surface of the patterned photoresist layer; and
etching portions of the hardmask layer exposed by the openings of the patterned photoresist layer having the passivation layer formed thereon.