US 12,249,508 B2
Selective patterning with wet-dry bilayer resist
Anton J. Devilliers, Clifton Park, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on May 3, 2022, as Appl. No. 17/735,726.
Claims priority of provisional application 63/183,128, filed on May 3, 2021.
Claims priority of provisional application 63/183,129, filed on May 3, 2021.
Claims priority of provisional application 63/183,130, filed on May 3, 2021.
Prior Publication US 2022/0350246 A1, Nov. 3, 2022
Int. Cl. H01L 21/311 (2006.01); H01L 21/027 (2006.01); G03F 7/00 (2006.01); G03F 7/09 (2006.01)
CPC H01L 21/0276 (2013.01) [H01L 21/0274 (2013.01); H01L 21/31133 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); G03F 7/094 (2013.01); G03F 7/70466 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of patterning a substrate, the method comprising:
forming a multilayer photoresist stack on a substrate, the multilayer photoresist stack comprising a first layer of a wet photoresist deposited by spin-on deposition, and a second layer of a dry photoresist deposited by vapor deposition, the first layer positioned over the second layer;
forming a first relief pattern in the first layer by exposure to a first pattern of actinic radiation of a first wavelength and development of developable portions of the first layer using a first development process, the first relief pattern uncovering portions of the second layer;
forming a multi-color layer of the first relief pattern, the multi-color layer including the wet photoresist and a third material that is different from the wet photoresist and the dry photoresist; and
executing a selective patterning process for uncovered portions of one or two of the wet photoresist, the dry photoresist and the third material.