US 12,249,507 B2
Method of manufacturing a semiconductor device
An-Ren Zi, Hsinchu (TW); Ching-Yu Chang, Yuansun Village (TW); and Chin-Hsiang Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Aug. 10, 2022, as Appl. No. 17/885,114.
Application 17/885,114 is a division of application No. 16/991,996, filed on Aug. 12, 2020, granted, now 11,626,285.
Claims priority of provisional application 62/898,497, filed on Sep. 10, 2019.
Prior Publication US 2022/0392763 A1, Dec. 8, 2022
Int. Cl. H01L 21/027 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/0274 (2013.01) [H01L 21/67115 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor manufacturing apparatus, comprising:
a chamber,
wherein the chamber is a post exposure bake chamber;
a semiconductor substrate support in the chamber;
a gas flow inlet in the chamber;
a gas flow exhaust in the chamber;
a temperature sensor in the chamber;
a humidity sensor in the chamber;
a gas heater; and
a controller, programmed to:
control a gas flow into the chamber through the gas flow inlet at a flow rate ranging from 5 L/min to 40 L/min,
control exhaust gas flow from the chamber through the gas flow exhaust at a flow rate ranging from 10 L/min to 50 L/min,
control the gas flowing through the gas flow exhaust at a higher flow rate than the gas flowing through the gas flow inlet,
control a temperature of the gas flowing into the chamber to a temperature ranging from 100° C. to 190° C., and
control relative humidity in the chamber.