US 12,249,503 B2
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
Kiyohisa Ishibashi, Toyama (JP); and Tsukasa Kamakura, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Jul. 24, 2023, as Appl. No. 18/357,300.
Application 18/357,300 is a continuation of application No. 17/200,172, filed on Mar. 12, 2021, granted, now 11,810,781.
Claims priority of application No. 2020-052448 (JP), filed on Mar. 24, 2020.
Prior Publication US 2023/0369043 A1, Nov. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/02233 (2013.01) [H01L 21/0214 (2013.01); H01L 21/02211 (2013.01); H01L 21/67017 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
forming a first film to have a first predetermined film thickness over the substrate by performing a first cycle a first predetermined number of times, the first cycle including:
(a1) forming an oxynitride film by supplying a first film-forming gas to the substrate, the oxynitride film not containing carbon; and
(a2) changing the oxynitride film into a first oxide film by supplying a first oxidizing gas to the substrate to oxidize the oxynitride film.