US 12,249,502 B2
Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
Kazuki Nonomura, Toyama (JP); Kenichi Suzaki, Toyama (JP); and Yoshimasa Nagatomi, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Sep. 14, 2021, as Appl. No. 17/474,693.
Claims priority of application No. 2020-160111 (JP), filed on Sep. 24, 2020.
Prior Publication US 2022/0093386 A1, Mar. 24, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/455 (2006.01)
CPC H01L 21/0223 (2013.01) [C23C 16/45527 (2013.01); H01L 21/02255 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A substrate processing method, comprising
forming an oxide film containing a predetermined element on a surface of a substrate wherein the surface is provided with a pattern formed thereon by performing a cycle a predetermined number of times, the cycle comprising:
(a) forming a first layer containing the predetermined element on the surface of the substrate by supplying a source gas containing the predetermined element to the substrate from an outer periphery of the substrate toward the surface of the substrate; and
(b) forming an oxide layer containing the predetermined element on the surface of the substrate by supplying an oxidizing gas to the substrate from the outer periphery of the substrate toward the surface of the substrate to oxidize the first layer,
wherein (a) and (b) are performed non-simultaneously, and a supply time of supplying the oxidizing gas to the substrate in (b) is selected such that a thickness distribution of the oxide film becomes a predetermined distribution on the surface of the substrate by selecting the supply time to be a first time if the predetermined distribution is a convex shaped distribution and selecting the supply time to be a second time greater than the first time if the predetermined distribution is a concave shaped distribution.