| CPC H01J 37/32449 (2013.01) [H01J 7/02 (2013.01); H01J 37/32458 (2013.01); H01J 37/32724 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01)] | 20 Claims |

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1. A method of processing an optical device comprising:
positioning the optical device on a substrate support in an interior volume of a process chamber, the optical device comprising an optical device substrate and a plurality of optical device structures formed over the optical device substrate and spaced apart from each other, each optical device structure including a bulk region formed of silicon carbide and one or more surface regions formed of silicon oxycarbide;
providing one or more process gases to the interior volume of the process chamber;
generating a plasma of the one or more process gases in the interior volume of the process chamber for a first time period when the optical device is on the substrate support; and
stopping the plasma after the first time period, wherein a carbon content of the one or more surface regions of each optical device structure is reduced by at least 50% compared to the carbon content of the one or more surface regions of each optical device structure before the first time period.
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