US 12,249,488 B2
Plasma shaper to control ion flux distribution of plasma source
Alexandre Likhanskii, Malden, MA (US); Peter F. Kurunczi, Cambridge, MA (US); and Alan V. Hayes, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Mar. 3, 2022, as Appl. No. 17/686,200.
Prior Publication US 2023/0282449 A1, Sep. 7, 2023
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32422 (2013.01) [H01J 37/321 (2013.01); H01J 37/32623 (2013.01); H01J 37/3244 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A system, comprising:
a plasma source configured to generate a plasma within a plasma chamber enclosed by a chamber housing, wherein the plasma chamber housing is defined by a sidewall connected with an end wall, and wherein the plasma source comprises:
a plasma shaper extending into the plasma chamber from the end wall of the chamber housing, wherein the plasma source is a radio frequency inductively coupled plasma source, and wherein the plasma shaper comprises:
a shaper wall coupled to the end wall of the chamber housing; and
a shaper end wall connected to the shaper wall, the shaper end wall defining an indentation extending towards the end wall of the chamber housing;
a plurality of coils extending around the chamber housing, wherein the plasma shaper extends a first distance into the plasma chamber from the end wall of the chamber housing, wherein a lowermost coil of the plurality of coils is positioned a second distance away from the end wall of the chamber housing, and wherein the first distance is greater than the second distance; and
a shaper ring extending around an interior surface of the sidewall of the chamber housing, wherein the shaper ring is surrounded by the plurality of coils.