US 12,249,485 B2
Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
Takeshi Yasui, Toyama (JP); Katsunori Funaki, Toyama (JP); Masaki Murobayashi, Toyama (JP); and Koichiro Harada, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Dec. 4, 2023, as Appl. No. 18/527,833.
Application 18/527,833 is a continuation of application No. 16/821,511, filed on Mar. 17, 2020, granted, now 11,837,440.
Application 16/821,511 is a continuation of application No. PCT/JP2018/035217, filed on Sep. 21, 2018.
Claims priority of application No. 2017-204398 (JP), filed on Oct. 23, 2017.
Prior Publication US 2024/0105423 A1, Mar. 28, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01)
CPC H01J 37/3211 (2013.01) [H01J 37/3244 (2013.01); H01L 21/02247 (2013.01); H01L 21/308 (2013.01); H01J 2237/24564 (2013.01); H01J 2237/334 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A substrate processing apparatus, comprising:
a plasma vessel in which a process gas is plasma-excited; and
a coil installed to wind plural times in a spiral form around an outer periphery of the plasma vessel and configured to be supplied with high-frequency power,
wherein the coil is installed such that distances from an inner periphery of the coil to an inner periphery of the plasma vessel at plural positions of the coil between one end of the coil and the other end of the coil include at least a first distance and a second distance different from the first distance.