US 12,249,484 B2
Methods and apparatus for controlling radio frequency electrode impedances in process chambers
Jian Janson Chen, Fremont, CA (US); Yi Yang, Xi'an (CN); Chong Ma, Xi'an (CN); and Yuan Xue, Xi'an (CN)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Dec. 17, 2021, as Appl. No. 17/554,645.
Claims priority of application No. PCT/CN2021/101145 (WO), filed on Jun. 21, 2021.
Prior Publication US 2022/0406565 A1, Dec. 22, 2022
Int. Cl. H01J 37/32 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01)
CPC H01J 37/32091 (2013.01) [C23C 16/45536 (2013.01); C23C 16/505 (2013.01); H01J 37/32183 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a physical vapor deposition (PVD) process chamber configured to deposit material using a target and comprising:
a processing volume with a process shield surrounding the process volume,
an electrostatic chuck (ESC) with at least one electrode,
a DC filter, and
an RF termination filter, and
a controller,
wherein the DC filter is configured to be electrically connected at a connection point between an RF filter for a DC power supply and the at least one electrode embedded in the ESC, the DC filter configured to block DC current from the DC power supply from flowing through the DC filter and into the RF termination filter,
wherein the RF termination filter is configured to be electrically connected in series between the DC filter and an RF ground of the PVD process chamber and is configured to adjust an impedance of the at least one electrode relative to the RF ground, and
wherein the controller is configured to interact with the RF termination filter to adjust the impedance of the at least one electrode relative to the RF ground to compensate for changes in impedance of the process shield caused by deposition of target material on the process shield.