| CPC G21G 4/08 (2013.01) [A61K 51/1289 (2013.01); C04B 35/495 (2013.01); C04B 41/4535 (2013.01); C04B 41/4558 (2013.01); C04B 41/5045 (2013.01); C04B 41/87 (2013.01); A61N 5/1001 (2013.01); G21G 2001/0094 (2013.01)] | 16 Claims |

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1. A 228Th-based generator for producing 212Pb, comprising:
a tantalum oxide substrate having an atomic lattice and including an immobilized 228Th surface layer, wherein at least a portion of 228Th atoms from the 228Th surface layer have exchanged into the atomic lattice of the tantalum oxide substrate; and
a chamber comprising a collection surface, wherein the chamber is configured to house the tantalum oxide substrate in the chamber such that the 228Th surface layer of the tantalum oxide substrate is in gaseous communication with the collection surface;
wherein the 228Th surface layer permits emanation of gaseous 220Rn produced by radioactive decay of 228Th in the immobilized 228Th surface layer into the chamber; and
212Pb produced by radioactive decay of the gaseous 220Rn in the chamber collects on the collection surface.
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