US 12,249,379 B2
Open block-based read offset compensation in read operation of memory device
Xiaojiang Guo, Wuhan (CN); Jong Hoon Kang, Wuhan (CN); and Youxin He, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Nov. 7, 2023, as Appl. No. 18/387,780.
Application 18/387,780 is a continuation of application No. 17/459,430, filed on Aug. 27, 2021, granted, now 11,862,250.
Application 17/459,430 is a continuation of application No. PCT/CN2021/080130, filed on Mar. 11, 2021.
Prior Publication US 2024/0071512 A1, Feb. 29, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 7/00 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01)
CPC G11C 16/102 (2013.01) [G11C 16/08 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
an array of memory cells arranged in blocks; and
a peripheral circuit coupled to the array of memory cells and configured to:
determine that a block of the blocks is an open block based on an open block information; and
in response to the block of the blocks being an open block, perform a read operation on a memory cell of the array of memory cells in the block using a compensated read voltage, wherein the compensated read voltage has an offset from a default read voltage of the block.