US 12,249,373 B2
OTS-based dynamic storage structure and operation method thereof
Hao Tong, Hubei (CN); Binhao Wang, Hubei (CN); and Xiangshui Miao, Hubei (CN)
Assigned to HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Hubei (CN)
Appl. No. 18/033,075
Filed by HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Hubei (CN)
PCT Filed Jan. 25, 2022, PCT No. PCT/CN2022/073841
§ 371(c)(1), (2) Date Apr. 21, 2023,
PCT Pub. No. WO2023/070976, PCT Pub. Date May 4, 2023.
Claims priority of application No. 202111280349.1 (CN), filed on Oct. 29, 2021.
Prior Publication US 2024/0379159 A1, Nov. 14, 2024
Int. Cl. G11C 11/16 (2006.01); G11C 13/00 (2006.01)
CPC G11C 13/0069 (2013.01) [G11C 13/0004 (2013.01); G11C 13/004 (2013.01)] 14 Claims
OG exemplary drawing
 
1. An Ovonic Threshold Switch based (OTS-based) dynamic storage structure, the OTS-based dynamic storage structure comprising a plurality of storage units distributed in an array, wherein each of the storage units comprises an OTS gating transistor and a storage capacitor;
in each of the storage units, a first end of the OTS gating transistor is connected to a first end of the storage capacitor, and a second end of the OTS gating transistor and a second end of the storage capacitor are an input end and an output end corresponding to the storage unit;
wherein the OTS gating transistor has two states including a high resistance state and a low resistance state, when a voltage across the OTS gating transistor exceeds a threshold voltage Vth, the OTS gating transistor is switched from the high resistance state to the low resistance state, when the voltage across the OTS gating transistor in the low resistance state is lower than a holding voltage Vhold, the OTS gating transistor is switched from the low resistance state to the high resistance state.