US 12,249,369 B2
Adjusting operation voltage of cross point memory according to aging information
Hengyuan Lee, Hsinchu County (TW); Cheng-Hsien Wu, Hsinchu (TW); Yu-Sheng Chen, Taoyuan (TW); Chien-Min Lee, Hsinchu County (TW); and Xinyu Bao, Fremont, CA (US)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 8, 2022, as Appl. No. 17/666,553.
Claims priority of provisional application 63/219,838, filed on Jul. 9, 2021.
Prior Publication US 2023/0008947 A1, Jan. 12, 2023
Int. Cl. G11C 13/00 (2006.01); H10B 63/00 (2023.01)
CPC G11C 13/003 (2013.01) [G11C 13/0004 (2013.01); G11C 13/0035 (2013.01); G11C 13/004 (2013.01); G11C 13/0033 (2013.01); G11C 13/0069 (2013.01); G11C 2213/15 (2013.01); G11C 2213/72 (2013.01); H10B 63/20 (2023.02); H10B 63/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A control method to operate a memory device, the memory device comprising a selector and a serially connected memory element, the method comprising:
providing a first voltage to the memory device for accessing the memory element;
obtaining an aging information of the memory device, wherein the aging information corresponds to whether a threshold voltage of the selector is lowered; and
providing a second voltage to the memory device according to the aging information,
wherein the first voltage is a positive voltage and the second voltage is a negative voltage, and the first voltage and the second voltage are reverse biased voltages,
wherein when a read operation is performed to the memory device, the first voltage with a first voltage value is applied to the memory device,
wherein when a recovery operation is performed to the memory device, the second voltage with a second voltage value is applied to the memory device,
wherein the second voltage value is 0.1-10 times of the first voltage value.