US 12,248,360 B2
Storage device and storage system including the same
Chul Ho Lee, Hwaseong-si (KR); Ki Jong Nam, Hwaseong-si (KR); and Won-Gi Hong, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 26, 2023, as Appl. No. 18/372,949.
Application 18/372,949 is a continuation of application No. 17/486,341, filed on Sep. 27, 2021, granted, now 11,803,436.
Claims priority of application No. 10-2020-0175534 (KR), filed on Dec. 15, 2022.
Prior Publication US 2024/0020189 A1, Jan. 18, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 11/00 (2006.01); G01K 3/00 (2006.01); G06F 3/06 (2006.01); G06F 11/07 (2006.01); G06F 11/30 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01)
CPC G06F 11/076 (2013.01) [G01K 3/005 (2013.01); G06F 3/0619 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G06F 11/0727 (2013.01); G06F 11/3058 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An operation method of a storage device including a nonvolatile memory device, the operation method comprising:
receiving a retention mode activation request including a retention level;
issuing a retention mode command indicating the retention level in response to the retention mode activation request; and
performing a retention operation based on the retention level in response to the retention mode command, wherein a threshold voltage distribution width of valid data written to the nonvolatile memory device in the retention operation corresponds to the retention level.