	US 12,248,251 B2
	Silicon-containing resist underlayer film-forming composition including organic group having ammonium group
Wataru Shibayama, Toyama (JP); Hayato Hattori, Toyama (JP); Ken Ishibashi, Toyama (JP); and Makoto Nakajima, Toyama (JP)
Assigned to NISSAN CHEMICAL CORPORATION, Tokyo (JP)
Filed by NISSAN CHEMICAL CORPORATION, Tokyo (JP)
Filed on Jul. 12, 2022, as Appl. No. 17/862,932.
Application 17/862,932 is a division of application No. 16/759,142, previously published as PCT/JP2018/039514, filed on Oct. 24, 2018.
Claims priority of application No. 2017-206486 (JP), filed on Oct. 25, 2017.
Prior Publication US 2022/0373888 A1, Nov. 24, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/11 (2006.01); G03F 7/004 (2006.01); G03F 7/075 (2006.01); G03F 7/36 (2006.01); G03F 7/42 (2006.01)

CPC G03F 7/11 (2013.01) [G03F 7/0045 (2013.01); G03F 7/0752 (2013.01); G03F 7/0755 (2013.01); G03F 7/0757 (2013.01); G03F 7/36 (2013.01); G03F 7/42 (2013.01); G03F 7/422 (2013.01); G03F 7/423 (2013.01); G03F 7/425 (2013.01)]

11 Claims

1. A composition for forming a resist underlayer film containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane,

wherein the hydrolysis condensate is a hydrolysis condensate prepared through hydrolysis and condensation of the hydrolyzable silane in a solvent system consisting of a non-alcoholic solvent and in the presence of the nitric acid, and

wherein the hydrolysis condensate is selected from the group consisting of