US 12,248,249 B2
Resist material and pattern forming method
Kimiko Hattori, Tokyo (JP); and Kazuyo Morita, Tokyo (JP)
Assigned to OJI HOLDINGS CORPORATION, Tokyo (JP)
Appl. No. 17/623,995
Filed by Oji Holdings Corporation, Tokyo (JP)
PCT Filed Jun. 30, 2020, PCT No. PCT/JP2020/025632
§ 371(c)(1), (2) Date Dec. 30, 2021,
PCT Pub. No. WO2021/002350, PCT Pub. Date Jan. 7, 2021.
Claims priority of application No. 2019-123878 (JP), filed on Jul. 2, 2019.
Prior Publication US 2022/0373886 A1, Nov. 24, 2022
Int. Cl. G03F 7/039 (2006.01); C08F 220/22 (2006.01); C08F 220/28 (2006.01); G03F 7/20 (2006.01)
CPC G03F 7/039 (2013.01) [C08F 220/22 (2013.01); C08F 220/283 (2020.02); G03F 7/2059 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A resist material that comprises a polymer comprising a unit derived from a structure represented by the following formula (101):

OG Complex Work Unit Chemistry
wherein R1 each independently represents a hydrogen atom, an alkyl group optionally having a substituent, an acyl group optionally having a substituent, an allyl group optionally having a substituent, an alkoxy group optionally having a substituent, or an alkylsilyl group optionally having a substituent, and a plurality of R1 may be the same or different; R11 represents a hydrogen atom or an alkyl group optionally having a substituent; R2 represents a fluorine atom, a chlorine atom, or a bromine atom; and Y1 represents a single bond or a linking group.