US 12,248,243 B2
Multilayer graphene direct growth method and method for manufacturing pellicle for extreme ultraviolet lithography using the same
Hyeong Keun Kim, Yongin-si (KR); Seul Gi Kim, Yongin-si (KR); Hyun Mi Kim, Seoul (KR); and Hye Young Kim, Bucheon-si (KR)
Assigned to Korea Electronics Technology Institute, Seongnam-si (KR)
Filed by KOREA ELECTRONICS TECHNOLOGY INSTITUTE, Seongnam-si (KR)
Filed on Nov. 10, 2021, as Appl. No. 17/454,377.
Claims priority of application No. 10-2020-0149813 (KR), filed on Nov. 11, 2020.
Prior Publication US 2022/0146928 A1, May 12, 2022
Int. Cl. G03F 1/64 (2012.01); C01B 32/182 (2017.01); G03F 7/00 (2006.01)
CPC G03F 1/64 (2013.01) [C01B 32/182 (2017.08); G03F 7/70983 (2013.01); C01B 2204/04 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method for direct growth of multilayer graphene of a pellicle for extreme ultraviolet lithography, the pellicle comprising a silicon containing substrate and the multilayer graphene formed on the silicon containing substrate, the method comprising:
forming a graphene seed layer on the silicon containing substrate;
forming a metal catalyst layer on the graphene seed layer;
forming an amorphous carbon layer on the metal catalyst layer; and
directly growing the multilayer graphene from the graphene seed layer by interlayer exchange between the metal catalyst layer and the amorphous carbon layer through heat treatment, wherein carbon in the amorphous carbon layer passes through the metal catalyst layer and is moved to the graphene seed layer.