| CPC G02F 1/035 (2013.01) [G02B 6/136 (2013.01); G02B 2006/1204 (2013.01)] | 19 Claims |

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1. A photonics structure comprising:
an optoelectronic device layer over a semiconductor layer, said optoelectronic device layer including a first optoelectronic device comprising a Pockels material and a second optoelectronic device not comprising Pockels material;
at least one dielectric situated over and around said first optoelectronic device comprising said Pockels material;
a contact electrically coupled to said first optoelectronic device comprising said Pockels material;
an interconnect metal segment situated over said at least one dielectric and electrically coupled to said contact.
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