US 12,248,178 B2
Packaged device including an optical path structure aligned to an optical feature
Hsien-Wei Chen, Hsinchu (TW); and Ming-Fa Chen, Taichung (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 10, 2023, as Appl. No. 18/447,560.
Application 18/447,560 is a division of application No. 17/075,014, filed on Oct. 20, 2020, granted, now 11,899,242.
Claims priority of provisional application 63/001,207, filed on Mar. 27, 2020.
Prior Publication US 2023/0384521 A1, Nov. 30, 2023
Int. Cl. G02B 6/13 (2006.01); G02B 6/124 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/528 (2006.01); G02B 6/12 (2006.01); H01L 23/48 (2006.01)
CPC G02B 6/13 (2013.01) [G02B 6/124 (2013.01); H01L 21/56 (2013.01); H01L 23/528 (2013.01); H01L 24/08 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); G02B 2006/12107 (2013.01); H01L 23/481 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/83896 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
an optical integrated circuit including:
a silicon on insulator substrate;
a through substrate via (TSV) extending through a back side of the silicon on the insulator substrate;
an optical feature formed at a top side of the substrate; and
an interconnect structure formed over the top side of the substrate, the interconnect structure providing electrical connection to electrical components of the optical integrated circuit;
an electronic integrated circuit bonded to the optical integrated circuit by way of a bond interface, the bond interface including a first dielectric layer fusion bonded to a second dielectric layer and a first metal pad metal-to-metal bonded to a second metal pad; and
an optical path structure aligned to the optical feature, the optical path structure comprising a dielectric material that surrounds the electronic integrated circuit, the dielectric material extending to a topmost surface of the device, an integral portion of the optical path structure extending through the interconnect structure and through the first dielectric layer, and being free of optical interfaces from a top surface of the first dielectric layer to a bottom surface of the interconnect structure.