US 12,248,015 B2
Integrated circuit having current detection device and operating method thereof
Junsik Park, Suwon-si (KR); Heesu Kim, Suwon-si (KR); Kyungsuk Kim, Suwon-si (KR); and Namsu Kim, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 16, 2023, as Appl. No. 18/154,958.
Claims priority of application No. 10-2022-0069946 (KR), filed on Jun. 9, 2022.
Prior Publication US 2023/0400502 A1, Dec. 14, 2023
Int. Cl. H02H 9/04 (2006.01); G01R 31/16 (2006.01)
CPC G01R 31/16 (2013.01) 20 Claims
OG exemplary drawing
 
1. An integrated circuit comprising:
a pad;
a current detection device connected to the pad and configured to generate monitoring information corresponding to an electrostatic discharge (ESD) event; and
an internal circuit configured to receive the monitoring information from the current detection device,
wherein the current detection device includes:
a current sensing circuit including a T-coil that is configured to generate an ESD current when the ESD event occurs, and is further configured to generate an induced voltage corresponding to the ESD current;
a plurality of detection circuits configured to output a detection signal based on the induced voltage; and
a monitoring circuit configured to receive the detection signal from each of the plurality of detection circuits and to generate the monitoring information,
wherein the plurality of detection circuits have different sensitivities with respect to the induced voltage.