US 12,247,319 B2
Method for producing a SiC seed crystal for growth of a SiC ingot by heat-treating in a main container made of a SiC material
Tadaaki Kaneko, Hyogo (JP); and Kiyoshi Kojima, Tokyo (JP)
Assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo (JP); and TOYOTA TSUSHO CORPORATION, Nagoya (JP)
Appl. No. 17/633,096
Filed by KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo (JP); and TOYOTA TSUSHO CORPORATION, Nagoya (JP)
PCT Filed Aug. 5, 2020, PCT No. PCT/JP2020/030078
§ 371(c)(1), (2) Date Feb. 4, 2022,
PCT Pub. No. WO2021/025084, PCT Pub. Date Feb. 11, 2021.
Claims priority of application No. 2019-144543 (JP), filed on Aug. 6, 2019.
Prior Publication US 2022/0333270 A1, Oct. 20, 2022
Int. Cl. C30B 23/06 (2006.01); C30B 23/02 (2006.01); C30B 25/10 (2006.01); C30B 25/18 (2006.01); C30B 29/36 (2006.01); C30B 33/02 (2006.01); C30B 33/12 (2006.01); H01L 21/02 (2006.01)
CPC C30B 33/02 (2013.01) [C30B 23/025 (2013.01); C30B 23/063 (2013.01); C30B 25/10 (2013.01); C30B 25/186 (2013.01); C30B 29/36 (2013.01); C30B 33/12 (2013.01); H01L 21/02378 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method for producing a SiC seed crystal for growth of a SiC ingot, the method comprising a heat treatment step of heat-treating a SiC single crystal in an atmosphere containing Si element and C element,
wherein the heat treatment step is a step of heat-treating the SiC single crystal in a main container made of a SiC material,
wherein the heat treatment step comprises a planarization step of planarizing a surface of the SiC single crystal, wherein the planarization step is a step of etching the SiC single crystal in a SiC—Si equilibrium vapor pressure environment; and
wherein the heat treatment step comprises at least one step selected from a strained layer removal step of removing a strained layer of the SiC single crystal, and a basal plane dislocation reduction step of forming a growth layer with reduced basal plane dislocation on the SiC single crystal.