US 12,247,316 B2
Bipolar nanocomposite semiconductors
Boris N. Feigelson, Springfield, VA (US); Alexander L. Efros, Annandale, VA (US); Benjamin L. Greenberg, Alexandria, VA (US); and Michael Shur, Vienna, VA (US)
Assigned to The Government of the United States of America, as represented by the Secretary of the Navy, Arlington, VA (US)
Filed by The Government of the United States of America, as represented by the Secretary of the Navy, Arlington, VA (US)
Filed on Sep. 23, 2022, as Appl. No. 17/951,168.
Claims priority of provisional application 63/247,819, filed on Sep. 24, 2021.
Prior Publication US 2024/0014271 A1, Jan. 11, 2024
Int. Cl. C30B 29/22 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01)
CPC C30B 29/22 (2013.01) [H01L 29/66242 (2013.01); H01L 29/732 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A bipolar nanocomposite semiconductor (BNS) material having a predefined structure and electrical conductivity, comprising:
a first interconnected three-dimensional material network A comprising a first material X1 having an n- or p-type conductivity σX1;
a second interconnected three-dimensional material network B comprising a second material Y1 having a p- or n-type conductivity σY1 opposite to the conductivity σX1 of the first material X1;
a first type of charge carriers being transported via a corresponding transport channel in material X1;
a second type of charge carriers being transported via a corresponding transport channel in material Y1;
wherein the n- and p-type domains of the materials X1 and Y1 are interconnected throughout the BNS material to form a three-dimensional network of p-n junctions such that electrons and/or holes are transported throughout the BNS material via their respective transport channels throughout the BNS material in a predefined manner.