US 12,247,315 B2
Apparatus and method for manufacturing hexagonal crystals
Hyung Soo Ahn, Busan (KR); Jae Hak Lee, Seoul (KR); Byunggeun Ahn, Busan (KR); and Joo Ho Lee, Seoul (KR)
Assigned to LNBS CO. LTD., Busan (KR); Jae Hak Lee, Seoul (KR); Byunggeun Ahn, Seoul (KR); and Joo Ho Lee, Seoul (KR)
Filed by LNBS Co. Ltd., Busan (KR); Jae Hak Lee, Seoul (KR); Byunggeun Ahn, Busan (KR); and Joo Ho Lee, Seoul (KR)
Filed on Feb. 17, 2023, as Appl. No. 18/111,091.
Claims priority of application No. 10-2022-0022928 (KR), filed on Feb. 22, 2022; and application No. 10-2022-0078260 (KR), filed on Jun. 27, 2022.
Prior Publication US 2023/0272549 A1, Aug. 31, 2023
Int. Cl. C30B 25/08 (2006.01); C23C 16/06 (2006.01); C23C 16/24 (2006.01); C23C 16/30 (2006.01); C23C 16/32 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/46 (2006.01); C30B 25/10 (2006.01); C30B 25/14 (2006.01); C30B 29/06 (2006.01); C30B 29/08 (2006.01); C30B 29/16 (2006.01); C30B 29/36 (2006.01); C30B 29/40 (2006.01); C30B 29/52 (2006.01); C30B 29/62 (2006.01); C30B 29/66 (2006.01)
CPC C30B 25/08 (2013.01) [C23C 16/06 (2013.01); C23C 16/24 (2013.01); C23C 16/303 (2013.01); C23C 16/325 (2013.01); C23C 16/40 (2013.01); C23C 16/455 (2013.01); C23C 16/46 (2013.01); C30B 25/10 (2013.01); C30B 25/14 (2013.01); C30B 29/06 (2013.01); C30B 29/08 (2013.01); C30B 29/16 (2013.01); C30B 29/36 (2013.01); C30B 29/403 (2013.01); C30B 29/52 (2013.01); C30B 29/62 (2013.01); C30B 29/66 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method for manufacturing hexagonal crystals, comprising the steps of:
providing a source allocating part in a reaction tube, comprising:
disposing solid aluminum in a first allocating area which is formed around at least one penetration hole on a bottom surface; and
disposing a mixture of a main material of the hexagonal crystal and gallium in a second allocating area which is formed around the first allocating area,
providing a crystal growth part beneath with a depressed growth mold of the source allocating part,
heating the reaction tube in a temperature range of 900-1350° C.;
supplying a halogenation reaction gas and a nitrification reaction gas to the source allocating part;
generating chloride gas of the main material and gallium chloride gas by reacting the main material and gallium with the halogenation reaction gas, respectively;
generating aluminum chloride gas by reacting aluminum with the halogenation reaction gas;
generating Al-based nano-absorbers in the crystal growth part by reacting the generated chloride gas of the main material, gallium chloride gas, and aluminum chloride gas with the nitrification reaction gas;
generating AlN nuclei by reacting the Al-based nano-absorbers with the nitrification reaction gas;
generating nuclei of hexagonal crystals by reacting chloride gas of the main material with the nitrification reaction gas and then substituting the AlN nuclei with precursors of the main material; and
growing hexagonal crystals around the generated nuclei.