| CPC C30B 15/14 (2013.01) [C30B 15/20 (2013.01); C30B 29/06 (2013.01); Y10T 117/1032 (2015.01)] | 9 Claims |

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1. A Czochralski single crystal furnace for preparing monocrystalline silicon, comprising:
a reaction chamber, and
a first heat-preserving barrel and a second heat-preserving barrel respectively arranged around the reaction chamber, wherein:
a side wall of the first heat-preserving barrel is provided with a first opening, an axial direction of the first heat-preserving barrel is the same as an axial direction of the second heat-preserving barrel, and one of the first heat-preserving barrel and the second heat-preserving barrel is arranged around the other of the first heat-preserving barrel and the second heat-preserving barrel;
the Czochralski single crystal furnace has a first operation state and a second operation state, and the Czochralski single crystal furnace is configured to be switchable between the first operation state and the second operation state; wherein, in response to the Czochralski single crystal furnace being switched between the first operation state and the second operation state, the first heat-preserving barrel moves relative to the second heat-preserving barrel along the axial direction of the first heat-preserving barrel;
in response to the Czochralski single crystal furnace being in the first operation state, a side wall of the second heat-preserving barrel is configured to cover the first opening so as to isolate the reaction chamber from an outside of the Czochralski single crystal furnace; and
in response to the Czochralski single crystal furnace being in the second operation state, the second heat-preserving barrel is configured to expose the first opening, so that the reaction chamber is connected to the outside of the Czochralski single crystal furnace through the first opening.
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