US 12,247,310 B2
Lipseal edge exclusion engineering to maintain material integrity at wafer edge
Justin Oberst, Beaverton, OR (US); Bryan L. Buckalew, Tualatin, OR (US); and Kari Thorkelsson, Santa Clara, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 17/997,170
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Apr. 7, 2021, PCT No. PCT/US2021/026248
§ 371(c)(1), (2) Date Oct. 26, 2022,
PCT Pub. No. WO2021/221872, PCT Pub. Date Nov. 4, 2021.
Claims priority of provisional application 63/018,365, filed on Apr. 30, 2020.
Prior Publication US 2023/0167571 A1, Jun. 1, 2023
Int. Cl. C25D 17/00 (2006.01); C25D 5/02 (2006.01); C25D 5/12 (2006.01); C25D 7/12 (2006.01); C25D 21/12 (2006.01); H01L 21/288 (2006.01)
CPC C25D 17/004 (2013.01) [C25D 5/022 (2013.01); C25D 5/12 (2013.01); C25D 7/123 (2013.01); C25D 17/001 (2013.01); C25D 21/12 (2013.01); H01L 21/288 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of electrodepositing a metal onto a semiconductor substrate having a plurality of through-mask recessed features, the method comprising:
(a) electrodepositing a first metal into the recessed through-mask features of the semiconductor substrate, without fully filling the recessed through-mask features, in a first electroplating cell using a first lipseal, wherein the first lipseal contacts the semiconductor substrate at a periphery of the semiconductor substrate, and wherein an innermost point of contact between the first lipseal and the semiconductor substrate is located at a first distance from an edge of the semiconductor substrate; and
(b) electrodepositing a second metal into the recessed through-mask features of the semiconductor substrate after (a), in a second electroplating cell using a second lipseal, wherein the second lipseal contacts the semiconductor substrate at a periphery of the semiconductor substrate, wherein an innermost point of contact between the second lipseal and the semiconductor substrate is located at a second distance from the edge of the semiconductor substrate, and wherein the second distance is greater than the first distance.