| CPC C23G 1/14 (2013.01) [C11D 1/18 (2013.01); C11D 1/75 (2013.01); C11D 3/042 (2013.01); C11D 3/28 (2013.01); C11D 3/30 (2013.01); C11D 3/33 (2013.01); C11D 3/361 (2013.01)] | 20 Claims |
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1. A cleaning liquid for semiconductor substrates having undergone a chemical mechanical polishing process, the cleaning liquid comprising:
an amine oxide compound that is a compound represented by Formula (2), or its salt; and
at least one hydroxylamine compound selected from the group consisting of a hydroxylamine, a hydroxylamine derivative, and their salts,
wherein a content of the amine oxide compound is 0.00001 to 0.15 mass % based on a total mass of the cleaning liquid:
![]() where R3, R4 and R5 each independently represent an alkyl group having 1 to 6 carbon atoms, and two of R3, R4 and R5 may be bonded together to form a five- or six-membered nitrogen-containing non-aromatic ring that may have an alkyl group having 1 to 4 carbon atoms.
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