US 12,247,299 B2
Treatment liquid for semiconductor with ruthenium and method of producing the same
Tomoaki Sato, Yamaguchi (JP); Yuki Kikkawa, Yamaguchi (JP); Takafumi Shimoda, Yamaguchi (JP); and Takayuki Negishi, Yamaguchi (JP)
Assigned to TOKUYAMA CORPORATION, Yamaguchi (JP)
Filed by TOKUYAMA CORPORATION, Yamaguchi (JP)
Filed on Apr. 26, 2023, as Appl. No. 18/139,559.
Application 18/139,559 is a division of application No. 17/261,387, granted, now 11,674,230, previously published as PCT/JP2020/026635, filed on Jul. 8, 2020.
Claims priority of application No. 2019-176727 (JP), filed on Sep. 27, 2019; application No. 2019-193081 (JP), filed on Oct. 23, 2019; application No. 2019-211875 (JP), filed on Nov. 22, 2019; and application No. 2020-045869 (JP), filed on Mar. 16, 2020.
Prior Publication US 2023/0257887 A1, Aug. 17, 2023
Int. Cl. C23F 1/40 (2006.01); H01L 21/306 (2006.01)
CPC C23F 1/40 (2013.01) [H01L 21/30604 (2013.01)] 6 Claims
 
1. A treatment liquid for a semiconductor with ruthenium, comprising a hypobromite ion, wherein the hypobromite ion content is 0.001 mol/L or more and 0.20 mol/L or less,
wherein the treatment liquid has a pH of 12 or more and 14 or less, and
wherein the ruthenium is a ruthenium metal.