	US 12,247,298 B2
	Semiconductor wafer treatment liquid and production method thereof
Tomoaki Sato, Yamaguchi (JP); Yuki Kikkawa, Yamaguchi (JP); Takafumi Shimoda, Yamaguchi (JP); and Takayuki Negishi, Yamaguchi (JP)
Assigned to TOKUYAMA CORPORATION, Yamaguchi (JP)
Appl. No. 17/642,059
Filed by TOKUYAMA CORPORATION, Yamaguchi (JP)
PCT Filed Nov. 25, 2021, PCT No. PCT/JP2021/043087 § 371(c)(1), (2) Date Mar. 10, 2022, PCT Pub. No. WO2022/114036, PCT Pub. Date Jun. 2, 2022.
Claims priority of application No. 2020-196348 (JP), filed on Nov. 26, 2020.
Prior Publication US 2022/0411937 A1, Dec. 29, 2022
Int. Cl. C23F 1/40 (2006.01); H01L 21/3213 (2006.01)

CPC C23F 1/40 (2013.01) [H01L 21/32134 (2013.01)]

13 Claims

1. A semiconductor wafer treatment liquid, the treatment liquid comprising:

at least one hypohalite ion; and

at least one anion species selected from halate ion, halite ion and halide ion;

wherein the halate ion is at least one selected from ClO₃, BrO₃, and IO₃; the halite ion is at least one selected from ClO₂, BrO₂, and IO₂; the halide ion is at least one selected from Cl—,Br, and I—;

the treatment liquid has a pH of 7 or more and 14 or less; and

at least one of the anion species has a content of 0.30 mol/L or more and 6.00 mol/L or less relative to the treatment liquid,

wherein the at least one hypohalite ion comprises hypobromite ion, wherein the hypobromite ion has a content of 0.0010 mol/L or more and 0.20 mol/L or less relative to the treatment liquid.