US 12,247,297 B2
Multilayer film structure and method for producing same
Yuya Tsuchida, Ayase (JP); Yuya Suemoto, Ayase (JP); Yoshihiro Ueoka, Ayase (JP); Masami Mesuda, Ayase (JP); Hideto Kuramochi, Ayase (JP); Takahiro Nagata, Tsukuba (JP); Liwen Sang, Tsukuba (JP); and Toyohiro Chikyow, Tsukuba (JP)
Assigned to TOSOH CORPORATION, Shunan (JP); and National Institute for Materials Science, Tsukuba (JP)
Appl. No. 17/772,972
Filed by TOSOH CORPORATION, Shunan (JP); and National Institute for Materials Science, Tsukuba (JP)
PCT Filed Oct. 27, 2020, PCT No. PCT/JP2020/040216
§ 371(c)(1), (2) Date Apr. 28, 2022,
PCT Pub. No. WO2021/085411, PCT Pub. Date May 6, 2021.
Claims priority of application No. 2019-198886 (JP), filed on Oct. 31, 2019; and application No. 2020-140980 (JP), filed on Aug. 24, 2020.
Prior Publication US 2024/0158954 A1, May 16, 2024
Int. Cl. H01L 21/02 (2006.01); C23C 14/00 (2006.01); C23C 14/02 (2006.01); C23C 14/06 (2006.01); C23C 14/34 (2006.01); C23C 14/35 (2006.01); C23C 28/04 (2006.01); C30B 23/02 (2006.01); C30B 25/06 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 29/68 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 33/32 (2010.01); H01S 5/02 (2006.01)
CPC C23C 28/04 (2013.01) [C23C 14/0036 (2013.01); C23C 14/021 (2013.01); C23C 14/0617 (2013.01); C23C 14/3407 (2013.01); C23C 14/35 (2013.01); C30B 23/025 (2013.01); C30B 25/06 (2013.01); C30B 25/186 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); C30B 29/68 (2013.01); H01L 21/02381 (2013.01); H01L 21/0243 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01); H01L 21/02513 (2013.01); H01L 21/0254 (2013.01); H01L 21/02587 (2013.01); H01L 21/02631 (2013.01); H01L 21/02658 (2013.01); H01L 21/02661 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 21/02491 (2013.01); H01L 21/02505 (2013.01); H01L 33/32 (2013.01); H01S 5/021 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A multilayer film structure comprising:
an Si (111) substrate;
a first thin film provided on the Si (111) substrate, and
a second thin film provided on the first thin film,
wherein the first thin film is an aluminum nitride thin film, and the second thin film is a gallium nitride thin film,
wherein the Si (111) substrate is provided with an amorphous layer thereon, the amorphous layer having a thickness of from 0 nm to less than 1.0 nm, and
wherein a full width at half maximum (FWHM) of a rocking curve of (0002) plane at a surface of the multilayer film structure is 1.50° or less.