US 12,247,296 B2
Member for plasma processing device
Toshihiko Hanamachi, Kanagawa (JP); Shuhei Morota, Kanagawa (JP); Go Takahara, Kanagawa (JP); Masaru Takimoto, Kanagawa (JP); Hibiki Yokoyama, Kanagawa (JP); Hiroshi Mitsuda, Kanagawa (JP); Yoshihito Araki, Kanagawa (JP); and Kengo Ajisawa, Nagano (JP)
Assigned to NHK Spring Co., Ltd., Yokohama (JP); and IZUMI TECHNO INC., Okaya (JP)
Appl. No. 17/259,609
Filed by NHK Spring Co., Ltd., Yokohama (JP); and IZUMI TECHNO INC., Okaya (JP)
PCT Filed Jul. 17, 2019, PCT No. PCT/JP2019/028164
§ 371(c)(1), (2) Date Jan. 12, 2021,
PCT Pub. No. WO2020/017566, PCT Pub. Date Jan. 23, 2020.
Claims priority of application No. 2018-135083 (JP), filed on Jul. 18, 2018.
Prior Publication US 2021/0292911 A1, Sep. 23, 2021
Int. Cl. C23C 28/04 (2006.01)
CPC C23C 28/04 (2013.01) 7 Claims
OG exemplary drawing
 
1. A member for a plasma processing device comprising:
an aluminum base material; and
an oxide film formed on the aluminum base material and having a porous structure, the oxide film including
a first anodic oxide coating formed on a surface of the aluminum base material,
a second anodic oxide coating formed on the first anodic oxide coating, and
a third anodic oxide coating formed on the second anodic oxide coating,
wherein the first anodic oxide coating is harder than the second anodic oxide coating and the third anodic oxide coating,
a hole formed in each of the first anodic oxide coating, the second anodic oxide coating and the third anodic oxide coating are sealed, and
the first anodic oxide coating includes: a barrier layer on a part that contacts the aluminum base material; and a film layer on a part that contacts the second anodic oxide coating.