US 12,247,289 B2
Method for forming thin film using surface protection material
Geun Su Lee, Suwon-si (KR); Jae Min Kim, Bucheon-si (KR); Ha Na Kim, Suwon-si (KR); and Woong Jin Choi, Suwon-si (KR)
Assigned to EGTM CO., LTD., Suwon-si (KR)
Appl. No. 17/776,751
Filed by EGTM CO., LTD., Suwon-si (KR)
PCT Filed Nov. 16, 2020, PCT No. PCT/KR2020/016102
§ 371(c)(1), (2) Date May 13, 2022,
PCT Pub. No. WO2021/096326, PCT Pub. Date May 20, 2021.
Claims priority of application No. 10-2019-0146643 (KR), filed on Nov. 15, 2019.
Prior Publication US 2022/0403521 A1, Dec. 22, 2022
Int. Cl. C23C 16/52 (2006.01); C23C 16/02 (2006.01); C23C 16/40 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01)
CPC C23C 16/52 (2013.01) [C23C 16/0272 (2013.01); C23C 16/403 (2013.01); C23C 16/4408 (2013.01); C23C 16/455 (2013.01); C23C 16/45527 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A method of forming a thin film using a surface protection material having a plurality of ether groups, the method comprising:
supplying a metal precursor to the inside of a chamber in which a substrate is placed so that the metal precursor is adsorbed to the substrate;
purging the interior of the chamber; and
supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film,
wherein before forming the thin film, the method further comprises:
supplying the surface protection material to the inside of the chamber so that the surface protection material is adsorbed to the substrate; and
purging the interior of the chamber,
wherein the surface protection material is represented by the following Chemical Formula 3:
<Chemical Formula 3>

OG Complex Work Unit Chemistry
in <Chemical Formula 3>, n1 and n2 are integers of 0 to 5, m1 is an integer of 1 to 5,
R is selected from a plurality of ether functional groups including an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 1 to 10 carbon atoms, and an aryl group having 6 to 12 carbon atoms.