US 12,247,287 B2
Apparatus for performing film forming process on substrate and method of using vacuum chuck mechanism provided in the apparatus
Manabu Honma, Oshu (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on May 26, 2022, as Appl. No. 17/804,128.
Claims priority of application No. 2021-093838 (JP), filed on Jun. 3, 2021.
Prior Publication US 2022/0389582 A1, Dec. 8, 2022
Int. Cl. C23C 16/455 (2006.01); C23C 16/34 (2006.01); C23C 16/44 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01)
CPC C23C 16/45551 (2013.01) [C23C 16/345 (2013.01); C23C 16/4412 (2013.01); C23C 16/45512 (2013.01); C23C 16/45536 (2013.01); C23C 16/45557 (2013.01); C23C 16/45565 (2013.01); C23C 16/4584 (2013.01); C23C 16/4586 (2013.01); C23C 16/46 (2013.01); H01L 21/6838 (2013.01); H01L 21/68792 (2013.01); C23C 16/45548 (2013.01); H01L 21/68771 (2013.01)] 15 Claims
OG exemplary drawing
 
1. An apparatus that performs a film forming process on a substrate, comprising:
a rotary table having one surface on which a plurality of substrates are placed and configured to revolve the plurality of substrates around a rotary shaft by rotating around the rotary shaft;
a vacuum container configured to accommodate the rotary table and configured such that a space formed between the vacuum container and the one surface of the rotary table is separated into a first processing region to which a first processing gas to be adsorbed on the plurality of substrates is supplied and a second processing region to which a second processing gas that reacts with the first processing gas to form a thin film on surfaces of the plurality of substrates is supplied, wherein the plurality of substrates repeatedly and alternately pass through the first processing region and the second processing region;
a vacuum chuck mechanism provided in the rotary table and including a plurality of suction ports opened to placement regions on which the plurality of substrates are placed, to suction and fix the plurality of substrates, respectively, and a plurality of suction flow paths provided to communicate with the plurality of suction ports, respectively, so that interiors of the plurality of suction flow paths are evacuated; and
a switching mechanism configured to switch an operation status of the vacuum chuck mechanism between a full fixed state in which the plurality of substrates are suctioned and fixed through the plurality of suction ports and a selective release state in which the evacuation of a suction flow path of the plurality of suction flow paths communicating with a selected suction port that is selected from the plurality of suction ports is stopped, so that the suctioning and fixing of the substrate through the selected suction port is released.
 
11. A method of using a vacuum chuck mechanism provided in an apparatus for performing a film forming process on a plurality of substrates,
wherein the apparatus includes:
a rotary table having one surface on which the plurality of substrates are placed and configured to revolve the plurality of substrates around a rotary shaft by rotating around the rotary shaft;
a vacuum container configured to accommodate the rotary table and configured such that a space formed between the vacuum container and the one surface of the rotary table is separated into a first processing region to which a first processing gas to be adsorbed on the plurality of substrates is supplied and a second processing region to which a second processing gas that reacts with the first processing gas to form a thin film on surfaces of the plurality of substrates is supplied, wherein the plurality of substrates repeatedly and alternately pass through the first processing region and the second processing region; and
a vacuum chuck mechanism provided in the rotary table and including a plurality of suction ports opened to placement regions on which the plurality of substrates are placed, to suction and fix the plurality of substrates, respectively, and a plurality of suction flow paths provided to communicate with the plurality of suction ports, respectively, so that interiors of the plurality of suction flow paths are evacuated,
the method comprising:
performing a switching between setting a full fixed state in which the plurality of substrates are suctioned and fixed through the plurality of suction ports and setting a selective release state in which the evacuation of a suction flow path of the plurality of suction flow paths communicating with a selected suction port that is selected from the plurality of suction ports is stopped, so that the suctioning and fixing of the substrate through the selected suction port is released.