US 12,247,285 B2
Film-forming method and raw material solution
Takahiro Sakatsume, Takasaki (JP); and Takenori Watabe, Annaka (JP)
Assigned to SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Appl. No. 18/020,462
Filed by SHIN-ETSU CHEMICAL CO, LTD., Tokyo (JP)
PCT Filed Aug. 3, 2021, PCT No. PCT/JP2021/028711
§ 371(c)(1), (2) Date Feb. 9, 2023,
PCT Pub. No. WO2022/039017, PCT Pub. Date Feb. 24, 2022.
Claims priority of application No. 2020-139445 (JP), filed on Aug. 20, 2020.
Prior Publication US 2023/0313369 A1, Oct. 5, 2023
Int. Cl. C23C 16/44 (2006.01); C09D 1/00 (2006.01); C23C 16/40 (2006.01); C23C 16/448 (2006.01); C23C 16/46 (2006.01)
CPC C23C 16/448 (2013.01) [C09D 1/00 (2013.01); C23C 16/40 (2013.01); C23C 16/46 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A film-forming method in which film-formation is performed by heat-treating a mist of a raw material solution, the method comprising:
dissolving metal gallium in an acidic solution containing at least one of hydrobromic acid and hydroiodic acid to prepare an aqueous gallium solution;
adding a metal impurity to the aqueous gallium solution to prepare the raw material solution having a concentration of the metal impurity of less than 2%; and
atomizing the raw material solution into a mist, and performing film-forming.