US 12,247,283 B2
Method and apparatus for controlled ion implantation
Alexander K. Eidukonis, Amesbury, MA (US); Hans-Joachim L. Gossmann, Summit, NJ (US); Dennis Rodier, Francestown, NH (US); Stanislav S. Todorov, Topsfield, MA (US); Richard White, Newmarket, NH (US); Wei Zhao, Lexington, MA (US); Wei Zou, Lexington, MA (US); and Supakit Charnvanichborikarn, Gloucester, MA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Dec. 23, 2021, as Appl. No. 17/560,529.
Claims priority of provisional application 63/220,273, filed on Jul. 9, 2021.
Prior Publication US 2023/0016122 A1, Jan. 19, 2023
Int. Cl. H01L 29/06 (2006.01); C23C 14/48 (2006.01); C23C 14/54 (2006.01); H01J 37/304 (2006.01); H01J 37/317 (2006.01)
CPC C23C 14/54 (2013.01) [C23C 14/48 (2013.01); H01J 37/304 (2013.01); H01J 37/3171 (2013.01); H01L 29/0634 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of operating a beamline ion implanter, comprising:
performing, in the beamline ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate;
generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure;
calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose; and
performing, in the beamline ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose, wherein the set of filtered information comprises filtered on-board implantation information, collected from metrology performed on the substrate in the beamline ion implanter, and further comprises in-line data, collected from other fabrication tools or measurement tools of a fabricator used to process the given substrate.