US 12,247,281 B2
Method for coating a substrate with a Co-PI modified BiVO4/WO3 heterostructure film
Amar Kamal Mohmeadkhair Salih, Dhahran (SA); Qasem Ahmed Qasem Drmosh, Dhahran (SA); Tarek Kandiel, Dhahran (SA); and Zain Hassan Yamani, Dhahran (SA)
Assigned to KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS, Dhahran (SA)
Filed by KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS, Dhahran (SA)
Filed on Oct. 24, 2022, as Appl. No. 17/971,683.
Prior Publication US 2024/0133017 A1, Apr. 25, 2024
Prior Publication US 2024/0229218 A9, Jul. 11, 2024
Int. Cl. C23C 14/00 (2006.01); C23C 14/08 (2006.01); C23C 18/12 (2006.01); C23C 28/00 (2006.01); C25B 1/04 (2021.01); C25B 1/55 (2021.01); C25B 11/091 (2021.01); C25D 3/56 (2006.01); C25D 5/00 (2006.01)
CPC C23C 14/0036 (2013.01) [C23C 14/083 (2013.01); C23C 14/086 (2013.01); C23C 18/1208 (2013.01); C23C 18/1295 (2013.01); C23C 28/345 (2013.01); C25B 1/04 (2013.01); C25B 1/55 (2021.01); C25B 11/091 (2021.01); C25D 3/562 (2013.01); C25D 5/011 (2020.08)] 17 Claims
OG exemplary drawing
 
1. A method for coating a substrate with a Co-Pi modified BiVO4/WO3 heterostructure film, comprising:
direct current reactive sputtering tungsten (W) onto a substrate in a gaseous mixture comprising oxygen to form a tungsten trioxide (WO3) film on the substrate;
direct current reactive sputtering bismuth (Bi) onto the tungsten trioxide (WO3) film in a gaseous mixture comprising oxygen to form a dibismuth trioxide (Bi2O3) film on the WO3 film;
drop-casting a vanadyl acetylacetonate solution onto the Bi2O3 film and heating at a temperature of at least 450° C. in ambient air to convert the Bi2O3 film to a BiVO4 film;
wherein the BiVO4 film is a porous film comprising crystalline BiVO4;
immersing the BiVO4 film on the substrate in an aqueous mixture containing a cobalt salt and a phosphate salt;
photoelectrochemically coating the BiVO4 film with a cobalt-phosphate (Co-Pi) to form a modified film on the surface of the substrate.