US 12,247,141 B2
Polishing slurry composition
Nak Hyun Choi, Gyeonggi-do (KR); Jung Yoon Kim, Gyeonggi-do (KR); Hae Won Yang, Seoul (KR); and Soo Wan Choi, Seoul (KR)
Assigned to KCTECH CO., LTD., Gyeonggi-do (KR)
Appl. No. 17/415,704
Filed by KCTECH CO., LTD., Gyeonggi-do (KR)
PCT Filed Nov. 4, 2019, PCT No. PCT/KR2019/014782
§ 371(c)(1), (2) Date Jun. 17, 2021,
PCT Pub. No. WO2020/130332, PCT Pub. Date Jun. 25, 2020.
Claims priority of application No. 10-2018-0166901 (KR), filed on Dec. 21, 2018.
Prior Publication US 2022/0064488 A1, Mar. 3, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C09G 1/02 (2006.01); C09G 1/04 (2006.01); B82Y 40/00 (2011.01); H01L 21/304 (2006.01)
CPC C09G 1/02 (2013.01) [C09G 1/04 (2013.01); B82Y 40/00 (2013.01); H01L 21/304 (2013.01)] 15 Claims
 
1. A polishing slurry composition comprising:
a non-ionic macromolecule polymer having at least one amide bond;
a selectivity control agent; and
abrasive particles,
wherein the abrasive particles are prepared using a solid-phase method or a liquid-phase method, and are dispersed so that surfaces of the abrasive particles have positive charges,
wherein the polishing slurry composition has a zeta potential of +5 millivolts (mV) to +70 mV,
pH of the polishing slurry composition ranges from 3 to 6,
wherein the non-ionic macromolecule polymer is represented by the following Chemical Formula 1:

OG Complex Work Unit Chemistry
(In Chemical Formula 1, n is an integer greater than or equal to 2, R2 is a simple bond and substituted or unsubstituted C1-30 alkylene, alkenylene, cycloalkylene, arylene, arylalkylene, or alkynylene, and R1, R3, and R4 are each independently hydrogen, a hydroxyl group, C1-30 alkyl group, alkoxy group, aryl group or aralkyl group in which a functional group is substituted or unsubstituted),
wherein the non-ionic macromolecule polymer is present in an amount greater than 0.1% by weight (wt %) and less than or equal to 5 wt % in the polishing slurry composition, and
wherein in a shallow trench isolation (STI) process of a semiconductor device,
a polishing selectivity of a silicon oxide film:a silicon nitride film ranges from 2:1 to 30:1, or
a polishing selectivity of a silicon oxide film:a polysilicon film ranges from 2:1 to 20:1.