	US 12,247,140 B2
	Slurry and polishing method
Tomohiro Iwano, Tokyo (JP); Takaaki Matsumoto, Tokyo (JP); Tomomi Kukita, Tokyo (JP); and Tomoyasu Hasegawa, Tokyo (JP)
Assigned to Resonac Corporation, Tokyo (JP)
Appl. No. 17/278,974
Filed by Resonac Corporation, Tokyo (JP)
PCT Filed Sep. 25, 2018, PCT No. PCT/JP2018/035445 § 371(c)(1), (2) Date Mar. 23, 2021, PCT Pub. No. WO2020/065723, PCT Pub. Date Apr. 2, 2020.
Prior Publication US 2022/0033680 A1, Feb. 3, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C09G 1/02 (2006.01); C01F 17/235 (2020.01); C09K 3/14 (2006.01); H01L 21/304 (2006.01)

CPC C09G 1/02 (2013.01) [C01F 17/235 (2020.01); C09K 3/1409 (2013.01); C09K 3/1454 (2013.01); H01L 21/304 (2013.01); C01P 2004/62 (2013.01)]

16 Claims

1. A slurry for polishing a carbon-containing silicon oxide, the slurry comprising:

abrasive grains and a liquid medium, wherein

the abrasive grains include first particles and second particles in contact with the first particles,

a particle size of the second particles is smaller than a particle size of the first particles,

the first particles contain cerium oxide,

the second particles contain a cerium compound, and

the cerium compound includes a compound different from cerium oxide.