US 11,925,129 B2
Multi-layer selector device and method of fabricating the same
Jang Sik Lee, Pohang-si (KR); Kwang Hyun Kim, Seoul (KR); and Young Jun Park, Hwaseong-si (KR)
Assigned to POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION, Pohang-si (KR)
Appl. No. 17/623,241
Filed by POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION, Pohang-si (KR)
PCT Filed Nov. 9, 2021, PCT No. PCT/KR2021/016197
§ 371(c)(1), (2) Date Dec. 27, 2021,
PCT Pub. No. WO2022/103110, PCT Pub. Date May 19, 2022.
Claims priority of application No. 10-2020-0151131 (KR), filed on Nov. 12, 2020; and application No. 10-2020-0151132 (KR), filed on Nov. 12, 2020.
Prior Publication US 2022/0367809 A1, Nov. 17, 2022
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01)
CPC H10N 70/8833 (2023.02) [H10B 63/80 (2023.02); H10N 70/023 (2023.02); H10N 70/041 (2023.02); H10N 70/063 (2023.02); H10N 70/841 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A multi-layer selector device, comprising:
a substrate;
a lower electrode layer disposed on the substrate;
a switching layer disposed on the lower electrode layer, configured for performing a switching operation by forming and destroying a conductive filament, and made of a multi-layer to control the formation of the conductive filament; and
an upper electrode layer disposed on the switching layer,
wherein the switching layer comprises:
a first threshold voltage control layer, a conductive filament forming layer, a metal doped layer, and a second threshold voltage control layer, respectively disposed on the lower electrode layer.