US 11,925,128 B2
Differential ionic electronic transistors
Lei Cheng, San Jose, CA (US); and Thomas Rocznik, Mountain View, CA (US)
Assigned to Robert Bosch GmbH, Stuttgart (DE)
Filed by Robert Bosch GmbH, Stuttgart (DE)
Filed on Aug. 26, 2020, as Appl. No. 17/003,601.
Prior Publication US 2022/0069206 A1, Mar. 3, 2022
Int. Cl. H10N 70/20 (2023.01); G11C 13/00 (2006.01); H10N 70/00 (2023.01)
CPC H10N 70/24 (2023.02) [G11C 13/0011 (2013.01); H10N 70/823 (2023.02); H10N 70/826 (2023.02); H10N 70/8416 (2023.02); H10N 70/8836 (2023.02)] 20 Claims
OG exemplary drawing
 
1. An ionic transistor comprising:
a first source;
a first drain spaced apart from the first source;
a first storage layer electrically connected to the first source and drain;
a second source spaced apart from the first source;
a second drain spaced apart from the second source;
a second storage layer electrically connected to the second source and drain; and
an electrolyte layer situated between and electrically connected to the first and second storage layers, the first and/or second storage layers include a sodium ionic conductor including a Na—V—P—O compound, a Na—Zr—Si—P—O compound, a Na—Ti—O compound or a combination thereof.