US 11,925,125 B2
High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices
Bartlomiej Adam Kardasz, Pleasanton, CA (US); Jorge Vasquez, San Jose, CA (US); Mustafa Pinarbasi, Morgan Hill, CA (US); and Georg Wolf, San Francisco, CA (US)
Assigned to Integrated Silicon Solution, (Cayman) Inc., Grand Cayman (KY)
Filed by Integrated Silicon Solution, (Cayman) Inc., Grand Cayman (KY)
Filed on Jan. 23, 2022, as Appl. No. 17/581,950.
Application 17/581,950 is a continuation of application No. 15/859,458, filed on Dec. 30, 2017, granted, now 11,264,557.
Prior Publication US 2022/0149267 A1, May 12, 2022
Int. Cl. H10N 50/80 (2023.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H01F 41/30 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01)
CPC H10N 50/80 (2023.02) [G11C 11/161 (2013.01); H01F 10/3286 (2013.01); H01F 41/307 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H01F 10/3272 (2013.01); H01F 10/329 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A magnetic random access memory element, comprising:
a magnetic reference layer;
a magnetic free layer;
a non-magnetic barrier layer disposed below the magnetic free layer and above the magnetic reference layer; and
a MgO layer contacting the magnetic free layer and being disposed adjacent the magnetic free layer, the magnetic free layer being formed between the non-magnetic barrier layer and the MgO layer, the MgO layer comprising multiple homogeneous layers of MgO and having an area resistance of less than 1.5 Ωμm2 and being negligible compared to an area resistance of the non-magnetic barrier layer.