US 11,925,123 B2
Spin-orbit torque type magnetization rotational element, spin-orbit torque type magnetoresistance effect element, and magnetic memory
Eiji Komura, Tokyo (JP); and Tomoyuki Sasaki, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Filed by TDK CORPORATION, Tokyo (JP)
Filed on Nov. 1, 2021, as Appl. No. 17/515,957.
Application 17/515,957 is a continuation in part of application No. 16/625,449, granted, now 11,195,992, previously published as PCT/JP2019/000312, filed on Jan. 9, 2019.
Claims priority of application No. 2018-002187 (JP), filed on Jan. 10, 2018.
Prior Publication US 2022/0059757 A1, Feb. 24, 2022
Int. Cl. G11C 16/04 (2006.01); G11C 11/16 (2006.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/10 (2023.02) [G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A spin-orbit torque type magnetization rotational element
comprising:
a spin-orbit torque wiring extending in a first direction;
a first ferromagnetic layer laminated in a second direction intersecting the spin-orbit torque wiring,
a first nonmagnetic metal layer and a second nonmagnetic metal layer which are connected to the spin-orbit torque wiring at positions sandwiching the first ferromagnetic layer in the first direction in a plan view seen in the second direction; and
a first insulating layer surrounding the spin-orbit torque wiring,
wherein, in the first direction, a center of gravity of the first ferromagnetic layer is positioned at a position deviating toward either a first nonmagnetic metal layer side or a second nonmagnetic metal layer side from a reference point that is a center between the first nonmagnetic metal layer and the second nonmagnetic metal layer, and
the first insulating layer is any one selected from the group consisting of silicon nitride, aluminum nitride, aluminum oxide, and magnesium oxide.