US 11,925,043 B2
Quantum dot light-emitting device and electronic device
Moon Gyu Han, Suwon-si (KR); Heejae Lee, Seongnam-si (KR); Eun Joo Jang, Suwon-si (KR); Tae Ho Kim, Seongnam-si (KR); Kun Su Park, Seongnam-si (KR); Won Sik Yoon, Seoul (KR); and Hyo Sook Jang, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD, Suwon-si (KR)
Filed on Oct. 16, 2020, as Appl. No. 17/072,436.
Claims priority of application No. 10-2019-0129887 (KR), filed on Oct. 18, 2019; and application No. 10-2020-0133002 (KR), filed on Oct. 14, 2020.
Prior Publication US 2021/0119161 A1, Apr. 22, 2021
Int. Cl. H10K 50/115 (2023.01); H10K 50/11 (2023.01); H10K 50/16 (2023.01); H10K 71/00 (2023.01); H10K 71/12 (2023.01); H10K 101/40 (2023.01); H10K 101/30 (2023.01)
CPC H10K 50/115 (2023.02) [H10K 50/11 (2023.02); H10K 50/166 (2023.02); H10K 71/00 (2023.02); H10K 71/12 (2023.02); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A quantum dot light-emitting device comprising
a first electrode and a second electrode,
a quantum dot layer between the first electrode and the second electrode,
a first electron transport layer and a second electron transport layer disposed between the quantum dot layer and the second electrode, wherein the second electron transport layer is disposed between the quantum dot layer and the first electron transport layer,
wherein a lowest unoccupied molecular orbital energy level of the second electron transport layer is shallower than a lowest unoccupied molecular orbital energy level of the first electron transport layer, and a lowest unoccupied molecular orbital energy level of the quantum dot layer is shallower than a lowest unoccupied molecular orbital energy level of the second electron transport layer,
wherein the first electron transport layer comprises a first metal oxide nanoparticle, and the second electron transport layer comprises a second metal oxide nanoparticle different from the first metal oxide nanoparticle, and the second metal oxide nanoparticle comprises a cerium oxide nanoparticle, a strontium titanium oxide nanoparticle, a barium tin oxide nanoparticle, or a combination thereof,
wherein the second electron transport layer comprises a cerium oxide nanoparticle and an n-type dopant including cesium, wherein the cesium is present in an amount of 2 atomic percent to 16 atomic percent based on a total number of atoms of cerium and cesium in the second electron transport layer.