US 11,925,025 B2
Semiconductor device and method of controlling the same
Junichi Suzuki, Tokyo (JP)
Assigned to RENESAS ELECTRONICS CORPORATION, Tokyo (JP)
Filed by RENESAS ELECTRONICS CORPORATION, Tokyo (JP)
Filed on Nov. 11, 2020, as Appl. No. 17/095,018.
Claims priority of application No. 2019-204402 (JP), filed on Nov. 12, 2019.
Prior Publication US 2021/0143168 A1, May 13, 2021
Int. Cl. H10B 43/30 (2023.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H10B 10/00 (2023.01); H10B 12/00 (2023.01); H10B 20/00 (2023.01); H10B 41/40 (2023.01); H10B 43/40 (2023.01)
CPC H10B 43/30 (2023.02) [H01L 21/823462 (2013.01); H01L 21/823857 (2013.01); H10B 10/18 (2023.02); H10B 12/50 (2023.02); H10B 20/367 (2023.02); H10B 41/40 (2023.02); H10B 43/40 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A semiconductor device comprising a memory cell and a switch circuit formed on a semiconductor substrate,
wherein the switch circuit is disposed outside the memory cell and electrically connected to the memory cell,
wherein the memory cell includes a plurality of transistors including a first transistor,
wherein the switch circuit comprises a second transistor electrically connected to the first transistor,
wherein the second transistor includes:
a first word gate formed on a first gate insulating film;
a second word gate formed on a second gate insulating film having a thickness thicker than the first gate insulating film,
wherein in the second transistor, when a current flows through the switch circuit, a first voltage is supplied from the outside of the switch circuit, so that a first region of the semiconductor substrate under the first word gate becomes conductive state,
wherein in the second transistor, when a current flows through the switch circuit, a second voltage is supplied from the outside of the switch circuit, so that a second region of the semiconductor substrate under the first coupling gate becomes conductive state, and
wherein the second voltage is higher than the first voltage.